歡迎光臨~泰州巨納新能源有限公司
語言選擇: 中文版 ∷  英文版

異質結

  • 基于硅基的CVD石墨烯與CVD氮化硼異質結構(11cm,4片裝)
  • 基于硅基的CVD石墨烯與CVD氮化硼異質結構(11cm,4片裝)
  • 基于硅基的CVD石墨烯與CVD氮化硼異質結構(11cm,4片裝)
基于硅基的CVD石墨烯與CVD氮化硼異質結構(11cm,4片裝)基于硅基的CVD石墨烯與CVD氮化硼異質結構(11cm,4片裝)基于硅基的CVD石墨烯與CVD氮化硼異質結構(11cm,4片裝)

基于硅基的CVD石墨烯與CVD氮化硼異質結構(11cm,4片裝)

CVD Graphene/CVD Hexagonal Boron Nitride heterostructure on SiO2/Si wafer

Properties of Graphene/h-BN Film:

Single Layer Graphene Film on Single Layer h-BN Film transferred onto 285 nm (p-doped) SiO2/Si wafer

Size: 1cmx1cm; 4 pack

The thickness and quality of each film is controlled by Raman Spectroscopy

The coverage of this product is about 98%

The films are continuous, with minor holes and organic residues

High Crystalline Quality

The graphene film is premodominantly single layer (more than 95%) with occasional small multilayer islands (less than 5% bi-layers)

Sheet Resistance: 430-800 Ω/square

Properties of Silicon/Silicon Dioxide Wafers:
Oxide Thickness: 285 nm
Oxide Thickness: 285 nm
Color: Violet
Wafer thickness: 525 micron
Resistivity: 0.001-0.005 ohm-cm
Type/Dopant: P/Boron
Orientation: <100>
Front Surface: Polished
Back Surface: Etched


用手機掃描二維碼關閉
二維碼
天天爱海南麻将下载 四人麻将游戏下载免费 3d明天预测 今日股票 沈阳沐足用品大全 山西11选五技巧 福彩开奖视频现场直播 闲来广东麻将安卓下 … 大庆52麻将下载安装 青海快三今天的走势图 贵州十一选五走势图一定牛 七乐彩几个号算中奖 本期深圳风采开奖时间 胜负足彩比分直播500 微乐江西南昌麻将下载 东方6 1历史中奖号码 2018年001至152期资料